ELIMINATION OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS BY CONTROLLED INTRODUCTION OF INTERFACIAL MISFIT DISLOCATIONS

被引：61

作者：

ROZGONYI, GA ^{[1
]}

PETROFF, PM ^{[1
]}

PANISH, MB ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 06期

关键词：

D O I：

10.1063/1.1655171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：251 / 254

页数：4

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[6] STRESS COMPENSATION IN GA1-XALXAS1-YPY LPE LAYERS ON GAAS SUBSTRATES
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