MECHANISM OF OPTICALLY INDUCED DEGRADATION IN INP-IN1-XGAXASYP1-Y HETEROSTRUCTURES

被引：36

作者：

MAHAJAN, S ^{[1
]}

JOHNSTON, WD ^{[1
]}

POLLACK, MA ^{[1
]}

NAHORY, RE ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 10期

关键词：

D O I：

10.1063/1.90617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optically degraded regions in In1-xGaxAs yP1-y layers, grown on (001) InP substrates by liquid phase epitaxy, have been examined in detail by transmission electron microscopy. It is shown that these areas are associated with dislocation clusters or bundles which are aligned parallel to the 〈100〉 directions. We conclude that the observed features develop by nonradiative-recombination- enhanced glide of threading and inclusion-generated dislocations present in the layers.

引用

页码：717 / 719

页数：3

共 20 条

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