TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF DARK-SPOT DEFECTS IN INGAASP-INP DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING-DIODES AGED AT HIGH-TEMPERATURE

被引：28

作者：

UEDA, O

YAMAKOSHI, S

KOMIYA, S

AKITA, K

YAMAOKA, T

机构：

来源：

关键词：

D O I：

10.1063/1.91469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：300 / 301

页数：2

共 6 条

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[2] KAMEJIMA T, UNPUBLISHED
[3] NISHITANI Y, UNPUBLISHED
[4] OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON
TAN, TY
TICE, WK
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 615 - 631
[5] DEFECT STRUCTURE OF DEGRADED GA1-XALXAS DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING-DIODES
UEDA, O
ISOZUMI, S
YAMAKOSHI, S
KOTANI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 765 - 772
[6] YAMAKOSHI S, UNPUBLISHED