OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS

被引：62

作者：

AKITA, K

KUSUNOKI, T

KOMIYA, S

KOTANI, T

机构：

[1] Fujitsu Laboratories Limited, Kawasaki, 211, Kamikodanaka 1015, Nakahara

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 46卷 / 06期

关键词：

D O I：

10.1016/0022-0248(79)90227-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

New etchants, HBr/HF or HBr/CH3COOH, produced sharp etch pits on (100) and (111) slices of InP. The etch pit shape produced on (100) by HBr/HF was pyramidal. The shape on (100) produced by HBr/CH3COOH varied from pyramidal to elongated rectangular along 〈110〉 with increasing the composition ratio of CH3COOH to HBr. The shape produced on (111)B by HBr/HF or HBr/CH3COOH was triangular pyramidal. The etch rates of these new etchants and HBr/H3PO4 were measured as a function of composition ratio at room temperature. The correspondence between pits and dislocations was examined and the results indicated that etch pits produced by these etchants corresponded to dislocations. © 1979.

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页码：783 / 787

页数：5

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