METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP

被引:149
作者
HUBER, A [1 ]
LINH, NT [1 ]
机构
[1] THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
关键词
D O I
10.1016/0022-0248(75)90054-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:80 / 84
页数:5
相关论文
共 20 条
[1]   ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&
[2]  
ASTLES MG, 1972, ELECTRON LETT, V8
[3]   PRELIMINARY STUDY OF DISLOCATIONS IN INDIUM AND GALLIUM PHOSPHIDES [J].
CLARKE, RC ;
ROBERTSON, DS ;
VERE, AW .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (09) :1349-1354
[4]  
GATOS HC, 1960, J ELECTROCHEM SOC, V107
[5]   DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].
GRABMAIER, JG ;
WATSON, CB .
PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+
[6]   Defects and Laser Action in GaAs Diodes [J].
Hill, M. J. ;
Holt, D. B. .
JOURNAL OF MATERIALS SCIENCE, 1968, 3 (03) :244-258
[7]  
HILSUM C, 1970, ELECTRON LETT, V6
[8]  
HUBER AM, 1970, P INT S GAAS ACHEN, P118
[9]   A REVIEW OF BULK AND PROCESS-INDUCED DEFECTS IN GAAS SEMICONDUCTORS [J].
JUNGBLUTH, ED .
METALLURGICAL TRANSACTIONS, 1970, 1 (03) :575-+
[10]   EFFECT OF SUBSTRATE IMPERFECTIONS ON GAAS INJECTION LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].
KRESSEL, H ;
NELSON, H ;
MCFARLANE, SH ;
ABRAHAMS, MS ;
LEFUR, P ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3587-+