A REVIEW OF BULK AND PROCESS-INDUCED DEFECTS IN GAAS SEMICONDUCTORS

被引：17

作者：

JUNGBLUTH, ED

机构：

来源：

METALLURGICAL TRANSACTIONS | 1970年 / 1卷 / 03期

关键词：

D O I：

10.1007/BF02811580

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：575 / +

页数：1

共 42 条

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[5]

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[7] DECORATED DISLOCATIONS AND SUB-SURFACE DEFECTS INDUCED IN GAAS BY IN-DIFFUSION OF ZINC [J].

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[8] PRECIPITATES INDUCED IN GAAS BY IN-DIFFUSION OF ZINC [J].

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[9]

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[10]

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