PRELIMINARY STUDY OF DISLOCATIONS IN INDIUM AND GALLIUM PHOSPHIDES

被引：35

作者：

CLARKE, RC ^{[1
]}

ROBERTSON, DS ^{[1
]}

VERE, AW ^{[1
]}

机构：

[1] ROY RADAR ESTAB, GREAT MALVERN, ENGLAND

来源：

关键词：

D O I：

10.1007/BF00549351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1349 / 1354

页数：6

共 7 条

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[2] PREPARATION OF HIGH PURITY EPITAXIAL INF
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[3] MEIERAN ES, 1970, SIEMENS REV, V37, P39
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[5] Penning P., 1958, PHILIPS RES REP, V13, P79
[6] DEFECT STRUCTURE OF GAP CRYSTALS GROWN FROM GALLIUM SOLUTIONS VAPOR PHASE AND LIQUID PHASE EPITAXIAL DEPOSITION
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (11) : 1184 - &
[7] TAYLOR WE, 1960, PROPERTIES ELEMENTAL