ETCH PITS AND DISLOCATIONS OF GA1-XALXAS LIQUID-PHASE EPITAXIAL LAYERS

被引：12

作者：

KOMIYA, S ^{[1
]}

AKITA, K ^{[1
]}

NISHITANI, Y ^{[1
]}

ISOZUMI, S ^{[1
]}

KOTANI, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3367 / 3369

页数：3

共 15 条

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[9] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

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