ETCH PITS AND DISLOCATIONS IN (100) GAAS WAFERS

被引：21

作者：

ANGILELLO, J ^{[1
]}

POTEMSKI, RM ^{[1
]}

WOOLHOUSE, GR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2315 / 2316

页数：2

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