AGING DEGRADATION OF A GUNN DIODE DUE TO INDUCED DISLOCATIONS

被引：6

作者：

HASEGAWA, F ^{[1
]}

ITO, H ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

关键词：

D O I：

10.1063/1.1663525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1937 / 1943

页数：7

共 12 条

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JASKOLSKI, SV
ISHII, TK
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[3] BLAKESLEE AE, 1969, ELECTROCHEMICAL SOC
[4] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
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RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &
[5] DEGRADATION OF A GUNN DIODE BY DISLOCATIONS INDUCED DURING THERMOCOMPRESSION BONDING
HASEGAWA, F
ITO, H
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 107 - &
[6] DIFFERENT DIFFUSION BEHAVIOR OF COPPER IN EPITAXIAL AND IN BULK GAAS
HASEGAWA, F
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) : 1944 - 1947
[7] KITAGAWA N, UNPUBLISHED REPORT
[8] KURU I, 1970, 2 P C SOL STAT DEV T, P137
[9] INFLUENCE OF THERMOCOMPRESSION ON GAAS CRYSTAL FOR GUNN DIODE
MITSUI, S
ISHIHARA, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) : 603 - &
[10] NAKANISHI T, 1971, ED7148 IECE PAP