DIFFERENT DIFFUSION BEHAVIOR OF COPPER IN EPITAXIAL AND IN BULK GAAS

被引：16

作者：

HASEGAWA, F ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.1663526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1944 / 1947

页数：4

共 9 条

[1]

BERGH AA, 1971, IEEE T ELECTRON DEVI, VED18, P166

[2]

FULLER CS, 1954, PHYS REV, V91, P21

[3] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[4] IMPURITY TRANSFER IN GAAS VAPOR GROWTH AND CARRIER-CONCENTRATION PROFILES OF GROWN FILMS [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) :1342-&

[5] AGING DEGRADATION OF A GUNN DIODE DUE TO INDUCED DISLOCATIONS [J].

HASEGAWA, F ;

ITO, H .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :1937-1943

[6]

KURU I, 1970, 2 P C SOL STAT DEV T, P137

[7] PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE [J].

MARUYAMA, M ;

KIKUCHI, S ;

MIZUNO, O .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) :413-&

[8] SOME FACTORS AFFECTING THE DEGRADATION OF GAAS TUNNEL DIODES [J].

PIKOR, A ;

ELIE, G ;

GLICKSMAN, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (02) :178-180

[9]

WILLIAMS EW, 1967, T METALL SOC AIME, V239, P387

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