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AGING EFFECTS ON BULK GAAS DEVICES

被引：5
作者：
ALMOUFTI, MN
JASKOLSKI, SV
ISHII, TK
机构：
[1] Dept. of Elec. Engrg., Marquette University, Milwaukee, Wis.
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 02期
关键词：
D O I：
10.1109/PROC.1968.6255
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Degradation of bulk-effect GaAs devices, due to long-term use, was investigated. It was found that the frequency modes of oscillation and the volt-ampere characteristics were drastically changed due to prolonged use of the bulk-effect GaAs devices. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：236 / +
页数：1
相关论文
共 8 条
[1]  
CARROLL JE, 1966, ELECTRON LETT, V2, P141
[2]   PERMANENT DEGRADATION OF GAAS TUNNEL DIODES [J].
GOLD, RD ;
WEISBERG, LR .
SOLID-STATE ELECTRONICS, 1964, 7 (11) :811-821
[3]   SIMULTANEOUS LOW-FREQUENCY RELAXATION AND HIGH-FREQUENCY MICROWAVE OSCILLATION OF A BULK GAAS CW OSCILLATOR [J].
JASKOLSKI, SV ;
ISHII, TK .
ELECTRONICS LETTERS, 1967, 3 (01) :12-+
[4]  
JASKOLSKI SV, 1967, P NATL ELECTRON C, V23, P342
[5]  
JASKOLSKI SV, 1967, THESIS MARQUETTE U
[6]   FAILURE MECHANISMS IN GUNN DIODES [J].
JEPPSSON, B ;
MARKLUND, I .
ELECTRONICS LETTERS, 1967, 3 (05) :213-+
[7]   HEAT FLOW IN N++-N-N+ EPITAXIAL GAAS BULK EFFECT DEVICES [J].
KNIGHT, S .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01) :112-&
[8]   CARRIER GENERATION AND SWITCHING PHENOMENA IN N-GAAS DEVICES [J].
THIM, HW ;
KNIGHT, S .
APPLIED PHYSICS LETTERS, 1967, 11 (03) :83-&
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