CARRIER GENERATION AND SWITCHING PHENOMENA IN N-GAAS DEVICES

被引：27

作者：

THIM, HW

KNIGHT, S

机构：

来源：

关键词：

D O I：

10.1063/1.1755046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：83 / &

共 14 条

[1] RECENT RESULTS WITH EPITAXIAL GAAS GUNN EFFECT OSCILLATORS [J].

BRADY, DP ;

KNIGHT, S ;

LAWLEY, KL ;

UENOHARA, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1497-+

[2] ELECTRON-HOLE GENERATION IN GAAS [J].

CONWELL, EM .

[3] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES [J].

COPELAND, JA .

[4]

GUNN JB, 1956, P PHYS SOC LONDON, VB 69, P781

[5] GAAS POST-THRESHOLD MICROWAVE AMPLIFIER MIXER AND OSCILLATOR [J].

HAKKI, BW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02) :299-+

[6]

HOEFFLINGER B, 1966, IEEE DEVICE, VED13, P151

[7]

LEHNER HH, 1967, REV SCIENTIFIC INSTR

LIU, SG .

[9]

LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434

[10]

OLIVER MR, PRIVATE COMMUNICATIO