ELECTRON-HOLE GENERATION IN GAAS

被引：9

作者：

CONWELL, EM

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 10期

关键词：

D O I：

10.1063/1.1754621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：383 / +

页数：1

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[1] DIRECT OBSERVATION OF DRIFT VELOCITY AS A FUNCTION OF ELECTRIC FIELD IN GALLIUM ARSENIDE
CHANG, DM
MOLL, JL
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (08) : 283 - +
[2] INFRARED RADIATION FROM BULK GAAS - (DC PULSE EXCITATION - 9000 A - E)
CHANG, KKN
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PRAGER, HJ
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (08) : 196 - &
[3] CONWELL EM, SUBMITTED PUBLICATIO
[4] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES
COPELAND, JA
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 140 - +
[5] COPELAND JA, SUBMITTED PUBLICATIO
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (08): : 781 - 790
[7] MEASUREMENT OF NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GAAS
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ELLIOTT, BJ
[J]. PHYSICS LETTERS, 1966, 22 (04): : 369 - +
[8] SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES
HEEKS, JS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 68 - +
[9] INFRARED AND MICROWAVE RADIATIONS ASSOCIATED WITH A CURRENT-CONTROLLED INSTABILITY IN GAAS
LIU, SG
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (02) : 79 - +
[10] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
MCCUMBER, DE
CHYNOWETH, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 4 - +