SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES

被引：48

作者：

COPELAND, JA

机构：

来源：

关键词：

D O I：

10.1063/1.1754682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：140 / +

页数：1

共 8 条

[1] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS
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FAWCETT, W
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &
[2] INFRARED RADIATION FROM BULK GAAS - (DC PULSE EXCITATION - 9000 A - E)
CHANG, KKN
LIU, SG
PRAGER, HJ
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (08) : 196 - &
[3] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS
CONWELL, EM
VASSELL, MO
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +
[4] COPELAND JA, UNPUBLISHED
[5] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
MCCUMBER, DE
CHYNOWETH, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 4 - +
[6] SWITCHING CHARACTERISTICS OF GAAS FILM
MIZUSHIM.Y
IGARASHI, Y
OCHI, O
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 322 - &
[7] PROPERTIES OF AVALANCHE BREAKDOWN IN GAAS THIN-FILM SWITCH
MIZUSHIMA, Y
IGARASHI, Y
OCHI, O
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (05): : 509 - +
[8] THE INFLUENCE OF INTERELECTRONIC COLLISIONS ON CONDUCTION AND BREAKDOWN IN POLAR CRYSTALS
STRATTON, R
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 246 (1246): : 406 - 422