10000-HOUR CONTINOUS CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS WITH A BUFFER LAYER AT ROOM-TEMPERATURE

被引：3

作者：

NODA, Y

SAKAI, K

MATSUSHIMA, Y

AKIBA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：997 / 998

页数：2

相关论文

共 8 条

[1] ROOM-TEMPERATURE CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS EMITTING AT 1-56 MU-M [J].

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y ;

YAMAMOTO, T .

ELECTRONICS LETTERS, 1979, 15 (19) :606-607

[2] EFFECTS OF DOUBLE-CLADDING STRUCTURE ON LPE-GROWN INGAASP-INP LASERS IN THE 1.5 MU-M RANGE [J].

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y ;

YAMAMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L79-L82

[3] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DH LASER EMITTING AT 1.51 MU-M [J].

ARAI, S ;

ASADA, M ;

SUEMATSU, Y ;

ITAYA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2333-2334

[4] NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS [J].

ARAI, S ;

ASADA, M ;

SUEMATSU, Y ;

ITAYA, Y ;

TANBUNEK, T ;

KISHINO, K .

ELECTRONICS LETTERS, 1980, 16 (10) :349-350

[5] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M [J].

KAWAGUCHI, H ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

NAGAI, H ;

IWANE, G .

ELECTRONICS LETTERS, 1979, 15 (21) :669-670

[6] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].

MIYA, T ;

TERUNUMA, Y ;

HOSAKA, T ;

MIYASHITA, T .

ELECTRONICS LETTERS, 1979, 15 (04) :106-108

[7] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION [J].

NAGAI, H ;

NOGUCHI, Y ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

IWANE, G .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L218-L220

[8] 10000-H CONTINUOUS CW OPERATION OF IN1-XGAXASYP1-Y-INP DH-LASERS AT ROOM-TEMPERATURE [J].

YAMAMOTO, T ;

SAKAI, K ;

AKIBA, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :684-687