10000-H CONTINUOUS CW OPERATION OF IN1-XGAXASYP1-Y-INP DH-LASERS AT ROOM-TEMPERATURE

被引：47

作者：

YAMAMOTO, T

SAKAI, K

AKIBA, S

机构：

[1] KDD Research and Development Laboratories

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 08期

关键词：

D O I：

10.1109/JQE.1979.1070086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Life tests of In1-xGaxAsyP1-y/InP DH lasers fabricated from (100)-oriented wafers were carried out at 20°C in a dry-nitrogen ambient. One laser was operated for more than 10 000 h with a threshold current increase of about 15 percent. Dark-line defects and dark-spot defects were few in the stripe regions of the lasers, even after longterm CW’ operation. The observed dark-line defects were oriented in the (110) directions. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：684 / 687

页数：4

共 11 条

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