INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION

被引：68

作者：

NAGAI, H

NOGUCHI, Y

TAKAHEI, K

TOYOSHIMA, Y

IWANE, G

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 04期

关键词：

D O I：

10.1143/JJAP.19.L218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L218 / L220

页数：3

共 8 条

[1] ROOM-TEMPERATURE CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS EMITTING AT 1-56 MU-M [J].

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y ;

YAMAMOTO, T .

ELECTRONICS LETTERS, 1979, 15 (19) :606-607

[2] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DH LASER EMITTING AT 1.51 MU-M [J].

ARAI, S ;

ASADA, M ;

SUEMATSU, Y ;

ITAYA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2333-2334

[3]

DOI A, 1979, 37TH ANN DEV RES C B

[4]

IMOTO N, 1979, ELECTR COMMUN LAB TE, V20, P963

[5] BURIED STRIPE GAINASP-INP DH LASER PREPARED BY USING MELTBACK METHOD [J].

KANO, H ;

OE, K ;

ANDO, S ;

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) :1887-1888

[6] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M [J].

KAWAGUCHI, H ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

NAGAI, H ;

IWANE, G .

ELECTRONICS LETTERS, 1979, 15 (21) :669-670

[7] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].

MIYA, T ;

TERUNUMA, Y ;

HOSAKA, T ;

MIYASHITA, T .

ELECTRONICS LETTERS, 1979, 15 (04) :106-108

[8] LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH FOR ROOM-TEMPERATURE CW OPERATION OF 1.55-MU-M INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER [J].

TAKAHEI, K ;

HAGAI, H ;

KAWAGUCHI, H .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :309-310

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