ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DH LASER EMITTING AT 1.51 MU-M

被引：15

作者：

ARAI, S

ASADA, M

SUEMATSU, Y

ITAYA, Y

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 12期

关键词：

D O I：

10.1143/JJAP.18.2333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：2333 / 2334

页数：2

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[7] 1.3 MU-M CW OPERATION OF GAINASP/INP DH DIODE-LASERS AT ROOM-TEMPERATURE
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[8] LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS
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[9] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES
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