LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS

被引：65

作者：

OLSEN, GH

NUESE, CJ

ETTENBERG, M

机构：

[1] RCA Laboratories, Princeton

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 04期

关键词：

D O I：

10.1063/1.90774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vapor-grown double-heterojunction lasers of InGaAsP/InP have been prepared with cw room-temperature threshold currents of 85 mA and differential quantum efficiencies exceeding 50% at 1.25 μm. From several lasers, fundamentaal-lateral- and fundamental-longitudinal-mode operation have been observed over moderate current ranges. Over 1000 h of room-temperature cw operation has been observed to date without significant degradation.

引用

页码：262 / 264

页数：3

共 18 条

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