VAPOR-GROWN CW ROOM-TEMPERATURE GAAS-INYGA1-YP LASERS

被引：22

作者：

NUESE, CJ ^{[1
]}

OLSEN, GH ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] RCA,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1063/1.88871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：54 / 56

页数：3

相关论文

共 13 条

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[7] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES FROM VAPOR-GROWN IN1-XGAXP/GAAS STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1974, 25 (10) : 612 - 614
[8] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES OF INXGA1-XAS-INYGA1-YP WITH EMISSION WAVELENGTH BETWEEN 0.9 AND 1.15MU
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[9] PREPARATION AND PROPERTIES OF VAPOR-GROWN IN 1-XGAXP
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[10] PANISH MB, 1974, APPLIED SOLID STATE, V4