INFLUENCE OF GAS-PHASE STOICHIOMETRY ON DEFECT MORPHOLOGY, IMPURITY DOPING, AND ELECTROLUMINESCENCE EFFICIENCY OF VAPOR-GROWN GAAS P-N-JUNCTIONS

被引：18

作者：

ENSTROM, RE ^{[1
]}

NUESE, CJ ^{[1
]}

APPERT, JR ^{[1
]}

GANNON, JJ ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 11期

关键词：

D O I：

10.1149/1.2401722

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1516 / 1523

页数：8

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