THERMAL-EXPANSION OF INXGA1-XP ALLOYS

[1] ARCHER RJ, 1970, ELECTROCHEMICAL SOCI

[2] Cohen M.U., 1936, REV SCI INSTRUM, V6, P155, DOI DOI 10.1063/1.1752101

[3] Precision lattice constants from x-ray powder photographs [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1935, 6 (03) : 68 - 74

[4] SOLIDUS BOUNDARY IN GAP-INP PSEUDOBINARY SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 534 - +

[5] GROWTH OF IN(1-X) GAXP P-N JUNCTIONS BY LIQUID PHASE EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1469 - &

[6] KUDMAN I, 1971 EL SOC M

[7] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 421 - &

[8] Mabbitt A. W., 1970, Journal of Materials Science, V5, P1043, DOI 10.1007/BF02403275

[9] PREPARATION AND PROPERTIES OF VAPOR-GROWN IN 1-XGAXP [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 789 - &

[10] PAFF RJ, PRIVATE COMMUNICATIO

[1] ARCHER RJ, 1970, ELECTROCHEMICAL SOCI

[2] Cohen M.U., 1936, REV SCI INSTRUM, V6, P155, DOI DOI 10.1063/1.1752101

[3] Precision lattice constants from x-ray powder photographs [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1935, 6 (03) : 68 - 74

[4] SOLIDUS BOUNDARY IN GAP-INP PSEUDOBINARY SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 534 - +

[5] GROWTH OF IN(1-X) GAXP P-N JUNCTIONS BY LIQUID PHASE EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1469 - &

[6] KUDMAN I, 1971 EL SOC M

[7] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 421 - &

[8] Mabbitt A. W., 1970, Journal of Materials Science, V5, P1043, DOI 10.1007/BF02403275

[9] PREPARATION AND PROPERTIES OF VAPOR-GROWN IN 1-XGAXP [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 789 - &

[10] PAFF RJ, PRIVATE COMMUNICATIO