ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES FROM VAPOR-GROWN IN1-XGAXP/GAAS STRUCTURES

被引：17

作者：

NUESE, CJ ^{[1
]}

ETTENBERG, M ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 10期

关键词：

D O I：

10.1063/1.1655331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：612 / 614

页数：3

共 21 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2] THERMAL EXPANSION OF ALAS [J].

ETTENBERG, M ;

PAFF, RJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+

[3]

FISHER DG, UNPUBLISHED

[4] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER [J].

HAYASHI, I ;

PANISH, MB ;

FOY, PW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) :211-&

[5] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :150-&

[6] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB ;

FOY, PW ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&

[7]

KRESSEL H, 1969, RCA REV, V30, P106

[8] LUMINESCENCE FROM IN0.5GA0.5P PREPARED BY VAPOR-PHASE EPITAXY [J].

KRESSEL, H ;

NUESE, CJ ;

LADANY, I .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3266-3272

[9] LARGE-OPTICAL-CAVITY (A1GA)AS-GAAS HETEROJUNCTION LASER DIODE - THRESHOLD AND EFFICIENCY [J].

KRESSEL, H ;

HAWRYLO, FZ ;

LOCKWOOD, HF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :561-+

[10] MEASUREMENTS OF REFRACTIVE-INDEX STEP AND OF CARRIER CONFINEMENT AT (AIGA) AS-GAAS HETEROJUNCTIONS [J].

KRESSEL, H ;

LOCKWOOD, HF ;

BUTLER, JK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4095-4097

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