EFFECTS OF DOUBLE-CLADDING STRUCTURE ON LPE-GROWN INGAASP-INP LASERS IN THE 1.5 MU-M RANGE

被引：10

作者：

AKIBA, S

SAKAI, K

MATSUSHIMA, Y

YAMAMOTO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 02期

关键词：

D O I：

10.1143/JJAP.19.L79

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L79 / L82

页数：4

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[2] IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE
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[3] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
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[6] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M
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[7] 1.5 MU-M INGAASP-INP DH LASER WITH OPTICAL-WAVEGUIDE STRUCTURE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 1005 - 1006
[8] CRACK FORMATION IN INP-GAXIN1-XAS-INP DOUBLE-HETEROSTRUCTURE FABRICATION
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[9] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
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[10] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP
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