GALLIUM CONTAMINATION OF INP EPITAXIAL LAYERS IN INP/INGAASP MULTILAYER STRUCTURES GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY

被引：4

作者：

CHU, SNG

STEVIE, FA

MACRANDER, AT

KARLICEK, RF

CHANG, CC

JODLAUK, CM

STREGE, KE

MITCHAM, DL

JOHNSTON, WD

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 05期

关键词：

VAPOR PHASE EPITAXY;

D O I：

10.1149/1.2114056

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1187 / 1193

页数：7

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