RAMAN-SCATTERING STUDY OF FOLDED ACOUSTIC PHONONS IN GAAS/INXGA1-XAS STRAINED-LAYER SUPERLATTICES

被引：16

作者：

LOCKWOOD, DJ

DHARMAWARDANA, MWC

MOORE, WT

DEVINE, RLS

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.98441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：361 / 363

页数：3

共 14 条

[1] PHOTOLUMINESCENCE OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J].

ANDERSON, NG ;

LAIDIG, WD ;

LIN, YF .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) :187-202

[2]

BARIBEAU JM, 1986, SEMICONDUCTOR BASED, P185

[3]

BEAN JC, 1984, J VAC SCI TECHNOLO A, V2, P463

[4] FOLDED ACOUSTIC AND QUANTIZED OPTIC PHONONS IN (GAAL)AS SUPERLATTICES [J].

COLVARD, C ;

GANT, TA ;

KLEIN, MV ;

MERLIN, R ;

FISCHER, R ;

MORKOC, H ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1985, 31 (04) :2080-2091

[5]

DEVINE RAB, UNPUB

[6]

DHARMAWARDANA MWC, 1986, PHYS REV B, V34, P3024

[7]

DHARMAWARDANA MWC, 1987, PHYS REV B, V35, P2243

[8] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J].

DODSON, BW ;

TAYLOR, PA .

APPLIED PHYSICS LETTERS, 1986, 49 (11) :642-644

[9] DOPING AND TRANSPORT STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPER-LATTICES [J].

FRITZ, IJ ;

DAWSON, LR ;

ZIPPERIAN, TE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :387-390

[10] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

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