FORMATION OF SIC IN SILICON BY ION IMPLANTATION

被引：162

作者：

BORDERS, JA

PICRAUX, ST

BEEZHOLD, W

机构：

来源：

关键词：

D O I：

10.1063/1.1653516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：509 / &

共 9 条

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[8] INFRARED PROPERTIES OF CUBIC SILICON CARBIDE FILMS [J].

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[9]

STEIN HJ, PRIVATE COMMUNICATIO