VIBRATIONAL ABSORPTION OF CARBON IN SILICON

[1] LOW-TEMPERATURE FAR-INFRARED SPECTRA OF GERMANIUM + SILICON [J]. PHYSICAL REVIEW, 1964, 135 (3A): : A785 - +

[2] BALKANSKI M, 1960, CR HEBD ACAD SCI, V251, P1277

[3] INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 44 - 45

[4] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[5] BULANIN O, 1957, ZH FIZ KHIM USSR, V31, P1321

[6] Bullough R., 1963, PROGR SEMICONDUCTORS, V7, P100

[7] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521): : 453 - &

[8] FAN HY, 1960, P INT C SEMICONDUCTO

[9] FAN HY, 1961, CZECH ACAD SCI, P309

[10] FORNERIS, 1958, Z ELEKTROCHEM, V62, P1130

[1] LOW-TEMPERATURE FAR-INFRARED SPECTRA OF GERMANIUM + SILICON [J]. PHYSICAL REVIEW, 1964, 135 (3A): : A785 - +

[2] BALKANSKI M, 1960, CR HEBD ACAD SCI, V251, P1277

[3] INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 44 - 45

[4] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[5] BULANIN O, 1957, ZH FIZ KHIM USSR, V31, P1321

[6] Bullough R., 1963, PROGR SEMICONDUCTORS, V7, P100

[7] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521): : 453 - &

[8] FAN HY, 1960, P INT C SEMICONDUCTO

[9] FAN HY, 1961, CZECH ACAD SCI, P309

[10] FORNERIS, 1958, Z ELEKTROCHEM, V62, P1130