PROPERTIES OF P-TYPE INDIUM ANTIMONIDE .1. ELECTRICAL PROPERTIES

被引：51

作者：

HILSUM, C

BARRIE, R

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 71卷 / 460期

关键词：

D O I：

10.1088/0370-1328/71/4/317

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：676 / 685

页数：10

共 12 条

[1] MAGNETORESISTANCE IN STRONG MAGNETIC FIELDS
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[2] DINGLE RB, 1955, PHILOS MAG, V46, P831
[3] ELECTRON SCATTERING IN INSB
EHRENREICH, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) : 131 - 149
[4] HILSUM C, 1957, SERL TECHNICAL MEMO, V366
[5] THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS
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SONDHEIMER, EH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136): : 53 - 74
[6] KEYES RW, 1955, PHYS REV, V99, P190
[7] PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS IN INSB
KURNICK, SW
ZITTER, RN
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 278 - 285
[8] MADELUNG O, 1954, Z NATURFORSCH A, V9, P527
[9] IMPURITY SCATTERING IN SEMICONDUCTORS
MANSFIELD, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 76 - 82
[10] THE HALL EFFECT IN SEMICONDUCTORS
MANSFIELD, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (08): : 862 - 865