CONDUCTIVITY AND HALL-MOBILITY IN GASE SINGLE-CRYSTALS

被引：9

作者：

ANIS, MK

NAZAR, FM

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1981年 / 51卷 / 03期

关键词：

Compendex;

D O I：

10.1080/00207218108901322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconducting gallium compounds

引用

页码：211 / 214

页数：4

共 9 条

[1] PHOTOCONDUCTION IN GASE THIN-FILMS [J].

ANIS, MK ;

ZAHEER, MY ;

NAZAR, FM .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1981, 51 (01) :87-90

[2] GROWTH OF SINGLE-CRYSTALS OF GASE WITH NATURAL FACETS AT LARGE ANGLES TO LAYERS [J].

ANIS, MK ;

PIERCY, AR .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01) :K5-&

[3]

ANIS MK, 1979, THESIS BRIGHTON POLY

[4] INDIRECT ENERGY GAP IN GASE AND GAS [J].

AULICH, E ;

BREBNER, JL ;

MOOSER, E .

PHYSICA STATUS SOLIDI, 1969, 31 (01) :129-&

[5] THE GENERAL THEORY OF VANDERWAALS FORCES [J].

DZYALOSHINSKII, IE ;

LIFSHITZ, EM ;

PITAEVSKII, LP .

ADVANCES IN PHYSICS, 1961, 10 (38) :165-209

[6] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].

FIVAZ, R ;

MOOSER, E .

PHYSICAL REVIEW, 1967, 163 (03) :743-&

[7]

LEE PA, 1976, PHYSICS CHEM MATERIA, V4

[8] IMPURITY EFFECTS ON LOW-TEMPERATURE PHOTOLUMINESCENCE OF GASE [J].

SCHMID, P ;

VOITCHOVSKY, JP ;

MERCIER, A .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 21 (02) :443-450

[9]

van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

← 1 →