PHOTOCONDUCTION IN GASE THIN-FILMS

被引：12

作者：

ANIS, MK

ZAHEER, MY

NAZAR, FM

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1981年 / 51卷 / 01期

关键词：

Compendex;

D O I：

10.1080/00207218108901303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTING FILMS

引用

页码：87 / 90

页数：4

共 13 条

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ANIS, MK ;

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[2]

ANIS MK, 1979, THESIS BRIGHTON POLY

[3]

BREBNER JL, 1962, P INT C PHYS SEMICON, P760

[4] SEMICONDUCTORS OF THE TYPE A-III B-VI [J].

FIELDING, P ;

FISCHER, G ;

MOOSER, E .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :434-437

[5]

FISCHER G, 1963, HELV PHYS ACTA, V36, P317

[6]

LEE PA, 1976, PHYSICS CHEM MATERIA, V4

[7] SINGLE-CRYSTAL GROWTH OF LAYERED CRYSTALS [J].

LEVY, F .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 38 (02) :359-368

[8] PHOTOCONDUCTION IN SI3N4 DEPOSITED ON TUNGSTEN-COATED SILICON WAFERS [J].

NAZAR, FM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (01) :155-159

[9] PHOTOCURRENTS IN SIO2-FILMS [J].

NAZAR, FM .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) :843-844

[10] DC CONDUCTION IN SI3N4 FILMS GROWN BY PYROLYTIC REACTION BETWEEN SILANE AND AMMONIA [J].

NAZAR, FM .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :1953-1957

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