DC CONDUCTION IN SI3N4 FILMS GROWN BY PYROLYTIC REACTION BETWEEN SILANE AND AMMONIA

被引：10

作者：

NAZAR, FM

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 11期

关键词：

D O I：

10.1143/JJAP.17.1953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1953 / 1957

页数：5

共 18 条

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DIMARIA, DJ .

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[2] STUDY OF AN AL-SI3N4 INTERFACE BY PHOTOINJECTION MEASUREMENTS IN MNS AND MNOS SANDWICHES [J].

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[3] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J].

BROWN, GA ;

ROBINETT.WC ;

CARLSON, HG .

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[4] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES [J].

DOO, VY ;

KERR, DR ;

NICHOLS, DR .

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[5] SILICON NITRIDE A NEW DIFFUSION MASK [J].

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[6]

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[7] POOLE-FRENKEL EFFECT [J].

HALL, RB .

THIN SOLID FILMS, 1971, 8 (04) :263-&

[8]

HALL RM, 1971, PHIL MAG, V23, P59

[9] ELECTRICAL CONDUCTION THROUGH THIN AMORPHOUS SIC FILMS [J].

HARTMAN, TE ;

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MEAD, CA .

THIN SOLID FILMS, 1968, 2 (1-2) :79-&

[10]

Jonscher A. K., 1967, THIN SOLID FILMS, V1, P213

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