PHOTOCURRENTS IN SIO2-FILMS

被引：2

作者：

NAZAR, FM

机构：

[1] Solid State Physics Centre, Punjab University, New Campus

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 04期

关键词：

D O I：

10.1143/JJAP.18.843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：843 / 844

页数：2

共 21 条

[1]

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AITKEN, JM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :898-906

[3] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J].

GOODMAN, AM ;

ONEILL, JJ .

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[4] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1966, 152 (02) :785-+

[5] PHOTOEMISSION OF HOLES FROM SILICON INTO SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1966, 152 (02) :780-&

[6]

GOODMAN AM, 1968, J ELECTROCHEM SOC, V115, P276

[7] EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE [J].

GRUNTHANER, FJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2108-2112

[8] PHOTO-CURRENTS IN SILICON MONOXIDE FILMS [J].

JONSCHER, AK ;

ANSARI, AA .

PHILOSOPHICAL MAGAZINE, 1971, 23 (181) :205-&

[9]

KAPOOR VJ, 1977, PHYS REV LETT, V39, P1219, DOI 10.1103/PhysRevLett.39.1219

[10]

KAPOOR VJ, 1977, J APPL PHYS, V48, P739, DOI 10.1063/1.323664

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