EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE

[1] BARTON JC, UNPUBLISHED

[2] GRUNTHANER FJ, 1976, 1ST IEEE NON VOL SEM

[3] GRUNTHANER FJ, 1975, NBS40023 SPEC PUBL, P151

[4] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 644 - 645

[5] HILL JM, 1976, 23RD NAT S AM VAC SO

[6] HOWARD JK, 1976, 23RD NAT S AM VAC SO

[7] PHASE SEPARATION IN SILICON OXIDES AS SEEN BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1975, 27 (08) : 452 - 454

[8] SILICON LATTICE CONSTRAINTS ON STRUCTURE OF INTERFACE STATES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1558 - 1562

[9] RADIATION-INDUCED DEFECT CENTERS IN THERMALLY GROWN OXIDE-FILMS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2234 - 2239

[10] ORIGIN OF INTERFACE STATES AND OXIDE CHARGES GENERATED BY IONIZING-RADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1563 - 1568

[1] BARTON JC, UNPUBLISHED

[2] GRUNTHANER FJ, 1976, 1ST IEEE NON VOL SEM

[3] GRUNTHANER FJ, 1975, NBS40023 SPEC PUBL, P151

[4] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 644 - 645

[5] HILL JM, 1976, 23RD NAT S AM VAC SO

[6] HOWARD JK, 1976, 23RD NAT S AM VAC SO

[7] PHASE SEPARATION IN SILICON OXIDES AS SEEN BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1975, 27 (08) : 452 - 454

[8] SILICON LATTICE CONSTRAINTS ON STRUCTURE OF INTERFACE STATES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1558 - 1562

[9] RADIATION-INDUCED DEFECT CENTERS IN THERMALLY GROWN OXIDE-FILMS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2234 - 2239

[10] ORIGIN OF INTERFACE STATES AND OXIDE CHARGES GENERATED BY IONIZING-RADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1563 - 1568