ORIGIN OF INTERFACE STATES AND OXIDE CHARGES GENERATED BY IONIZING-RADIATION

被引：173

作者：

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1563 / 1568

页数：6

共 20 条

[1] EFFECTS OF HCL GETTERING, CR DOPING AND AL+ IMPLANTATION ON HARDENED SIO21
AUBUCHON, KG
HARARI, E
LEONG, DH
CHANG, CP
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 167 - 171
[2] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +
[3] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
AUSMAN, GA
MCLEAN, FB
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175
[4] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS
BOESCH, HE
MCLEAN, FB
MCGARRITY, JM
AUSMAN, GA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167
[5] BREWS JR, 1966, J APPL PHYS, V43, P2306
[6] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
CURTIS, OL
SROUR, JR
CHIU, KY
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513
[7] SERIES EQUIVALENT CIRCUIT REPRESENTATION OF SIO2-SI INTERFACE AND OXIDE TRAP STATES
EATON, DH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 841 - 846
[8] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
HEINE, V
NICOLLIAN, EH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +
[9] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[10] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
SNOW, EH
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06): : 894 - +

← 1 2 →