LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING

被引：153

作者：

DIMARIA, DJ ^{[1
]}

WEINBERG, ZA ^{[1
]}

AITKEN, JM ^{[1
]}

机构：

[1] THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 03期

关键词：

D O I：

10.1063/1.323705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：898 / 906

页数：9

共 61 条

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES
AITKEN, JM
YOUNG, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198
[2] CONTACT CURRENTS IN SILICON-NITRIDE
ARNETT, PC
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2092 - 2097
[3] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL
BERGLUND, CN
POWELL, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 573 - +
[4] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
CASTAGNE, R
VAPAILLE, A
[J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +
[5] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
CURTIS, OL
SROUR, JR
CHIU, KY
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513
[6] EFFECTS ON INTERFACE BARRIER ENERGIES OF METAL-ALUMINUM OXIDE-SEMICONDUCTOR (MAS) STRUCTURES AS A FUNCTION OF METAL ELECTRODE MATERIAL, CHARGE TRAPPING, AND ANNEALING
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5454 - 5456
[7] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077
[8] PHOTOCURRENT SPECTROSCOPY IN THIN-FILM INSULATORS - VOLTAGE DEPENDENCE OF EXTERNAL-CIRCUIT CURRENT
DIMARIA, DJ
FEIGL, FJ
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1874 - 1883
[9] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON
DIMARIA, DJ
KERR, DR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507
[10] CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK
DIMARIA, DJ
AITKEN, JM
YOUNG, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2740 - 2743

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