ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES

被引：117

作者：

AITKEN, JM ^{[1
]}

YOUNG, DR ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.322706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1196 / 1198

页数：3

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[10]

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