ELECTRON TRAPPING AT POSITIVELY CHARGED CENTERS IN SIO2

被引：45

作者：

NING, TH ^{[1
]}

OSBURN, CM ^{[1
]}

YU, HN ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 05期

关键词：

D O I：

10.1063/1.88138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：248 / 250

页数：3

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