A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE

被引：59

作者：

HARA, H

OKAMOTO, Y

OHNUMA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 09期

关键词：

D O I：

10.1143/JJAP.9.1103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1103 / +

页数：1

相关论文

共 12 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
CHYNOWETH, AG
MCKAY, KG
[J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376
[3] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES
DUH, CY
MOLL, JL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +
[4] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
HEINE, V
NICOLLIAN, EH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +
[5] PHOTOEMISSION OF HOLES FROM SILICON INTO SILICON DIOXIDE
GOODMAN, AM
[J]. PHYSICAL REVIEW, 1966, 152 (02): : 780 - &
[6] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS
GROVE, AS
LEISTIKO, O
HOOPER, WW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +
[7] AVALANCHE DRIFT INSTABILITY IN PLANAR PASSIVATED P-N JUNCTIONS
GURTLER, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 980 - +
[8] HETHERINGTON G, 1965, PHYS CHEM GLASSES, V6, P6
[9] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON
LEE, CA
KLEIMACK, JJ
BATDORF, RL
WIEGMANN, W
LOGAN, RA
[J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +
[10] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2
NICOLLIAN, EH
GOETZBERGER, A
BERGLUND, CN
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +