CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS

被引：59

作者：

DIMARIA, DJ

FEIGL, FJ

BUTLER, SR

机构：

[1] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015

[2] LEHIGH UNIV,CTR MAT RES,BETHLEHEM,PA 18015

[3] LEHIGH UNIV,DEPT MET & MAT SCI,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.11.5023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5023 / 5030

页数：8

共 46 条

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