LIMITATIONS UPON PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS CLOSE TO INTERFACES IN MOS CAPACITORS

被引：21

作者：

BREWS, JR ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.1661891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：379 / 384

页数：6

相关论文

共 4 条

[1] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J].

BERGLUND, CN ;

POWELL, RJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :573-+

[2] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[3] PREDICTED EFFECT OF EXPONENTIAL CHARGING PROFILES ON PHOTOINJECTED CURRENTS IN SILICON DIOXIDE [J].

LYNCH, WT .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (07) :3023-+

[4] PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS IN OXIDES OF MOS STRUCTURES [J].

POWELL, RJ ;

BERGLUND, CN .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4390-&