PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS IN OXIDES OF MOS STRUCTURES

被引：138

作者：

POWELL, RJ

BERGLUND, CN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.1659784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4390 / &

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[1] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL
BERGLUND, CN
POWELL, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 573 - +
[2] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[3] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2
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BERGLUND, CN
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +
[4] NICOLLIAN EH, TO BE PUBLISHED
[5] INTERFACE BARRIER ENERGY DETERMINATION FROM VOLTAGE DEPENDENCE OF PHOTOINJECTED CURRENTS
POWELL, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2424 - +
[6] PHOTOINJECTION INTO SIO2 - USE OF OPTICAL INTERFERENCE TO DETERMINE ELECTRON AND HOLE CONTRIBUTIONS
POWELL, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5093 - &
[7] POWELL RL, UNPUBLISHED
[8] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE
WILLIAMS, R
[J]. PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &