INTERFACE BARRIER ENERGY DETERMINATION FROM VOLTAGE DEPENDENCE OF PHOTOINJECTED CURRENTS

被引:284
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POWELL, RJ
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10.1063/1.1659238
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O59 [应用物理学];
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页码:2424 / +
页数:1
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共 27 条
[1]   HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J].
BARTELINK, D ;
MOLL, JL ;
MEYER, NI .
PHYSICAL REVIEW, 1963, 130 (03) :972-+
[2]  
BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[3]  
BERGLUND CN, UNPUBLISHED
[4]   REFLECTANCE AND PHOTOEMISSION FROM SI [J].
BRUST, D ;
PHILLIPS, JC ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1962, 9 (09) :389-&
[5]   ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J].
BRUST, D .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1337-&
[6]   BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].
DEAL, BE ;
SNOW, EH ;
MEAD, CA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&
[7]   The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].
Fowler, RH .
PHYSICAL REVIEW, 1931, 38 (01) :45-56
[8]   PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J].
GOODMAN, AM ;
ONEILL, JJ .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3580-&
[9]   PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1966, 152 (02) :785-+
[10]   PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1966, 144 (02) :588-&