DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES

被引：68

作者：

DISTEFANO, TH ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.1661931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：527 / 528

页数：2

共 10 条

[1] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].

CHOU, NJ ;

ELDRIDGE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+

[2] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J].

DISTEFAN.TH .

APPLIED PHYSICS LETTERS, 1971, 19 (08) :280-&

[3]

DISTEFANO TH, 1972, 32 ANN C PHYS EL ALB

[4] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :222-+

[5] PROTON AND SODIUM TRANSPORT IN SIO2 FILMS [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :749-+

[6] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J].

KLEIN, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :788-+

[7] INFLUENCE OF P-N JUNCTIONS ON MOBILE CHARGE DENSITY IN MOS TRANSISTORS [J].

SCHLEGEL, ES .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :425-&

[8] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

SNOW, EH ;

GROVE, AS ;

DEAL, BE ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&

[9] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE . EFFECTS OF ION MIGRATION IN OXIDE [J].

WILLIAMS, R .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1491-&

[10] SODIUM DISTRIBUTION IN THERMAL OXIDE ON SILICON BY RADIOCHEMICAL AND MOS ANALYSIS [J].

YON, E ;

KO, WH ;

KUPER, AB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :276-+

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