INFLUENCE OF P-N JUNCTIONS ON MOBILE CHARGE DENSITY IN MOS TRANSISTORS

被引：4

作者：

SCHLEGEL, ES

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.1659615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：425 / &

共 10 条

[1] STUDIES OF SODIUM IN SIO2 FILMS BY NEUTRON ACTIVATION AND RADIOTRACER TECHNIQUES [J].

BUCK, TM ;

ALLEN, FG ;

DALTON, JV ;

STRUTHERS, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :862-+

[2]

HOFSTEIN SR, 1966, IEEE T ELECTRON DEV, V13, P227

[3] BEHAVIOR OF SURFACE IONS ON SEMICONDUCTOR DEVICES [J].

SCHLEGEL, ES ;

SCHNABLE, GL ;

SCHWARZ, RF ;

SPRATT, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :973-&

[4] ADDITIONAL BIBLIOGRAPHY OF METAL-INSULATOR-SEMICONDUCTOR STUDIES [J].

SCHLEGEL, ES .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :951-+

[5] A BIBLIOGRAPHY OF METAL-INSULATOR-SEMICONDUCTOR STUDIES [J].

SCHLEGEL, ES .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :728-+

[6] CHARGES ON OXIDIZED SILICON SURFACES [J].

SHOCKLEY, W ;

QUEISSER, HJ ;

HOOPER, WW .

PHYSICAL REVIEW LETTERS, 1963, 11 (11) :489-&

[7] MOBILE ELECTRIC CHARGES ON INSULATING OXIDES WITH APPLICATION TO OXIDE COVERED SILICON P-N JUNCTIONS [J].

SHOCKLEY, W ;

HOOPER, WW ;

QUEISSER, HJ ;

SCHROEN, W .

SURFACE SCIENCE, 1964, 2 :277-287

[8] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

SNOW, EH ;

GROVE, AS ;

DEAL, BE ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&

[9] OBSERVATIONS ON PHOSPHORUS STABILIZED SIO2 FILMS [J].

YAMIN, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :256-+

[10]

YON E, 1966, IEEE T ELECTRON DEV, VED13, P276

← 1 →