A BIBLIOGRAPHY OF METAL-INSULATOR-SEMICONDUCTOR STUDIES

[1] THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 19 - 20

[2] ADAMS RV, 1959, J SOC GLASS TECHNOL, V43, pT147

[3] AKIYAMA K, 1966, JUN IEEE SOL DEV RES

[4] LOW-TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 465 - 465

[5] [Anonymous], 1966, GEOGR J, V132, P446

[6] [Anonymous], 1966, J ELECTROCHEM SOC

[7] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[8] RADIATION EFFECTS IN SILICA AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1959, 116 (04): : 802 - 811

[9] SECOND BREAKDOWN IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 811 - +

[10] ATALLA M, 1959, PROPERTIES ELEMENTAL, V5, P163

[1] THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 19 - 20

[2] ADAMS RV, 1959, J SOC GLASS TECHNOL, V43, pT147

[3] AKIYAMA K, 1966, JUN IEEE SOL DEV RES

[4] LOW-TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 465 - 465

[5] [Anonymous], 1966, GEOGR J, V132, P446

[6] [Anonymous], 1966, J ELECTROCHEM SOC

[7] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[8] RADIATION EFFECTS IN SILICA AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1959, 116 (04): : 802 - 811

[9] SECOND BREAKDOWN IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 811 - +

[10] ATALLA M, 1959, PROPERTIES ELEMENTAL, V5, P163