STUDIES OF SODIUM IN SIO2 FILMS BY NEUTRON ACTIVATION AND RADIOTRACER TECHNIQUES

被引:44
作者
BUCK, TM
ALLEN, FG
DALTON, JV
STRUTHERS, JD
机构
关键词
D O I
10.1149/1.2426755
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:862 / +
页数:1
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共 21 条
[1]  
CARLSON HG, 1965, OCT EL SOC M REC NEW
[2]   ION DRIFT IN FRINGING FIELD OF MOS CAPACITORS [J].
GOETZBERGER, A .
SOLID-STATE ELECTRONICS, 1966, 9 (09) :871-+
[3]   IMPROVED PROPERTIES OF SILICON DIOXIDE LAYERS GROWN UNDER BIAS [J].
GOETZBERGER, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) :138-+
[4]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[6]   STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].
KERR, DR ;
LOGAN, JS ;
BURKHARDT, PJ ;
PLISKIN, WA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&
[7]  
KERR DR, 1965, NOV IEEE SIL INT SPE
[8]  
LOGAN JS, 1965, JUN SOL STAT DEV RES
[9]   INVERSION OF OXIDIZED SILICON SURFACES BY ALKALI METALS [J].
MATHEWS, JR ;
GRIFFIN, WA ;
OLSON, KH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :899-&
[10]   LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].
NICOLLIAN, EH ;
GOETZBERGER, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :108-+