BEHAVIOR OF SURFACE IONS ON SEMICONDUCTOR DEVICES

被引：30

作者：

SCHLEGEL, ES

SCHNABLE, GL

SCHWARZ, RF

SPRATT, JP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 12期

关键词：

D O I：

10.1109/T-ED.1968.16548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：973 / &

共 11 条

[1]

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SURFACE SCIENCE, 1967, 6 (04) :440-+

[3]

KANG KD, 1965, RADCTR6535 FIN REPT

[4]

METZ ED, 1964, RADC SER RELIABILITY, V2, P163

[5]

SCHNABLE G, 1965, RADC SER RELIABILITY, V3, P108

[6]

SCHROEN W, 1965, RADCTR65141 QUART RE

[7]

SCHROEN W, 1966, RADC SER RELIABILITY, V4, P291

[8]

SELLO H, 1967, RADCTR6713 FIN RE ED, P39

[9] CHARGES ON OXIDIZED SILICON SURFACES [J].

SHOCKLEY, W ;

QUEISSER, HJ ;

HOOPER, WW .

PHYSICAL REVIEW LETTERS, 1963, 11 (11) :489-&

[10] MOBILE ELECTRIC CHARGES ON INSULATING OXIDES WITH APPLICATION TO OXIDE COVERED SILICON P-N JUNCTIONS [J].

SHOCKLEY, W ;

HOOPER, WW ;

QUEISSER, HJ ;

SCHROEN, W .

SURFACE SCIENCE, 1964, 2 :277-287

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