CHARGES ON OXIDIZED SILICON SURFACES

被引：40

作者：

SHOCKLEY, W

QUEISSER, HJ

HOOPER, WW

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.11.489

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：489 / &

共 4 条

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[4] ELECTRICAL CONDUCTION VIA SLOW SURFACE STATES ON SEMICONDUCTORS
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DEMARS, GA
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